| PART |
Description |
Maker |
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| IXBF40N160 IXBF40N140 |
Discrete IGBTs
High Voltage BIMOSFET
|
IXYS Corporation
|
| HVR-1X-40B SHV-20 SHV-16 UX-F0B SHV-02 SHV-03 SHV- |
9kV,High-Voltage Rectifier Diodes(9kV,高压整流二极 0.35 A, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 4.5 V, SILICON, SIGNAL DIODE
Ultra low profile, Two-piece, Discrete wire, FPC, and fine coaxial cable connectors; HRS No: 685-0018-5 05; No. of Positions: 14; Operating Temperature Range (degrees C): -35 to 85; General Description: Accessory; Ground plate for FPC type
High-Voltage Rectifier Diodes
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
http://
|
| IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFETs
|
IXYS[IXYS Corporation]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| FZT1053ATA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
75V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT-223
|
Diodes Incorporated
|
| IXTP01N100D IXTP01N100 |
High Voltage MOSFET 0.1 A, 1000 V, 110 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AD
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| PFS729EG PFS725EG PFS716EG PFS706EG PFS712EG PFS71 |
High Power PFC Controller with Integrated High-Voltage MOSFET
|
Power Integrations, Inc.
|
